The project was officially launched during the kick-off meeting held in Lyon on 25th February 2011.
The first year was mostly dedicated to the recruitement of the young researchers, with the objective that they could all attend the first training school organized in Barcelona in January 2012. Indeed, almost all of them took part to the school and met each other in a friendly and very productive atmosphere whereas the network meeting connected to the school gave the opportunity for the real launch of scientific discussions and collaborations on research activities.
The second training event occurred in Nürnberg from 26th to 28th March 2012, where a workshop on "power semiconductors devices and technologies" was successfully held, gathering not only the NetFISiC fellows but also an external attendance.
A video-teleconference lecture on "oral presentation techniques" was held in May 2012 for the network fellows.
The second training school was successfully organized from 11th to 15th July 2012 in Thessaloniki (more information under http://micronano2012.physics.auth.gr.)and a tutorial day was hold on September 2nd, 2012 in St Petersburg on growth of SiC from bulk to thin layers (more information here).
The next upcoming event is therefore, the joint workshop on Silicon Carbide Hetero-Epitaxy (HeteroSiC) and on Advanced Semiconductor Materials and devices for Power Electronics applications (WASMPE). This event is organized from June 17th to June 19th in Nice. For more information, please click here.
Together with the upcoming International Conference on Silicon Carbide and Related Materials (ICSCRM 2013) at Miyazaki, Japan, a Tutorial Day is organized on "Advanced materials for high power electronic application" on September 29th, 2013. For more information, please click here.
Please do not hesitate to join!